aug.1998 auxiliary cathode connector (red) 400 ?8 gate (white) f 3.5 depth 2.2 ?0.2 cathode 0.4 min 0.4 min type name anode f 63 ?0.5 f 63?.5 f 93 max 26 ?0.5 f 3.5 depth 2.2 ?0.2 mitsubishi gate turn-off thyristors FG2000FX-50DA high power inverter use press pack type FG2000FX-50DA outline drawing dimensions in mm application inverters, d.c. choppers, induction heaters, d.c. to d.c. converters. l i tqrm repetitive controllable on-state current ...........2200a l i t(av) average on-state current .....................1050a l v drm repetitive peak off state voltage ...................2500v l anode short type a a a ka a 2 s a/ m s v v a a w kw w w c c kn g v dm = 1875v, t j = 125 c, c s = 4.0 m f, l s = 0.3 m h f = 60hz, sine wave q = 180 , t f = 73 c one half cycle at 60hz one cycle at 60hz v d = 1250v, i gm = 30a, t j = 125 c recommended value 20 standard value repetitive controllable on-state current rms on-state current average on-state current surge (non-repetitive) on-state current current-squared, time integration critical rate of rise of on-state current peak forward gate voltage peak reverse gate voltage peak forward gate current peak gate reverse current peak forward gate power dissipation peak reverse gate power dissipation average forward gate power dissipation average reverse gate power dissipation junction temperature storage temperature mounting force required weight i tqrm i t(rms) i t(av) i tsm i 2 t d it /d t v fgm v rgm i fgm i rgm p fgm p rgm p fg(av) p rg(av) t j t stg symbol parameter conditions ratings 2200 1650 1050 16 10.5 10 5 1000 10 17 100 650 280 18 50 150 C40 ~ +125 C40 ~ +150 18 ~ 24 760 unit v rrm v rsm v r(dc) v drm v dsm v d(dc) unit symbol parameter v v v v v v voltage class 50da 17 17 17 2500 2500 2000 repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage + non-repetitive peak off-state voltage + dc off-state voltage + + : v gk = C2v maximum ratings
aug.1998 10 0 23 5710 1 8 4 23 5710 2 12 16 20 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 t j = 125? 10 0 23 10 2 5710 3 23 5710 4 23 5710 5 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v fgm = 10v v gt = 1.5v p fg(av) = 50w i fgm = 100a t j = 25? p fgm = 280w i gt = 2500ma 0.020 0 23 10 ? 5710 ? 23 10 0 5710 1 23 5710 ? 23 5710 0 0.008 0.012 0.016 0.004 on-state current (a) on-state voltage (v) maximum on-state characteristic surge on-state current (ka) conduction time (cycles at 60hz) rated surge on-state current gate voltage (v) gate current (ma) gate characteristics thermal impedance (?/ w) time (s) maximum thermal impedance characteristic (junction to fin) 2.4 50 50 50 10 1.5 2500 0.017 v ma ma ma v/ m s m s a v ma c/w on-state voltage repetitive peak reverse current repetitive peak off-state current reverse gate current critical rate of rise of off-state voltage turn-on time peak gate turn-off current gate trigger voltage gate trigger current thermal resistance t j = 125 c, i tm = 2000a, instantaneous measurment t j = 125 c, v rrm applied t j = 125 c, v drm applied, v gk = C2v t j = 125 c, v rg = 17v t j = 125 c, v d = 1250v, v gk = C2v t j = 125 c, i tm = 2200a, i gm = 30a, v d = 1250v junction to fin mitsubishi gate turn-off thyristors FG2000FX-50DA high power inverter use press pack type electrical characteristics symbol parameter test conditions limits min typ max unit v tm i rrm i drm i rg d v /d t t gt i gqm v gt i gt r th(j-f) t gq turn-off time t j = 125 c, i tm = 2200a, v dm = 1875v, d igq /d t = C30a/ m s v rg = 17v, c s = 4.0 m f, l s = 0.3 m h dc method : v d = 24v, r l = 0.1 w , t j = 25 c 30 m s 610 1000 performance curves
aug.1998 10.0 8.0 6.0 4.0 2.0 9.0 7.0 5.0 3.0 1.0 0 100 50 10 0 20 30 40 60 70 80 90 t gt t d i t = 2200a v d = 1250v d it /d t = 500a/ m s d ig /d t = 10a/ m s t j = 125?c 8000 6000 5000 3000 1000 0 140 e60 e20 20 60 100 2000 4000 7000 v d = 5 ~ 20v i t = 25 ~ 200a half sine wave 4000 3000 2500 1500 500 0 1200 0 1000 2000 3500 300 600 900 q = 30? 120? 180? resistive, inductive load q 360? 60? 90? 160 140 120 100 80 150 130 110 90 70 60 1200 1000 0 200 400 600 800 q 360? resistive, inductive load q = 30? 60? 90? 120? 180? 4000 3000 2500 1500 500 0 2000 0 1000 2000 3500 500 1000 1500 dc 270? q = 30? 120? 180? 360? q resistive, inductive load 60? 90? 130 110 100 80 60 50 2000 0 70 90 120 500 1000 1500 360? q resistive, inductive load q = 30? 60? 90? 180? 120? dc 270? on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (single-phase half wave) fin temperature (?c) average on-state current (a) allowable fin temperature vs. average on-state current (single-phase half wave) on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (rectangular wave) fin temperature (?c) average on-state current (a) allowable fin temperature vs. average on-state current (rectangular wave) gate trigger current (ma) junction temperature (?c) gate trigger current vs. junction temperature (typical) turn on time t gt , turn on delay time t d ( m s) turn on gate current (a) turn on time, turn on delay time vs. turn on gate current (typical) mitsubishi ga te turn-off thyrist ors FG2000FX-50DA high power inverter use press p ack type
aug.1998 700 600 500 400 300 200 2500 0 500 1000 1500 2000 v d = 1250v v dm = 1875v d igq /d t = ?0a/ m s v rg = 17v c s = 4.0 m f l s = 0.3 m h t j = 125? 50 40 30 20 10 0 60 10 20 30 40 50 t gq t s v d = 1250v v dm = 1875v i t = 2200a v rg = 17v c s = 4.0 m f l s = 0.3 m h t j = 125? 800 700 600 500 400 300 60 10 20 30 40 50 v d = 1250v v dm = 1875v i t = 2200a v rg = 17v c s = 4.0 m f l s = 0.3 m h t j = 125? 30 25 20 15 10 5 2500 0 500 1000 1500 2000 t gq t s v d = 1250v v dm = 1875v d igq /d t = ?0a/ m s v rg = 17v c s = 4.0 m f l s = 0.3 m h t j = 125? 1.6 1.2 1.0 0.6 0.2 0 2500 0 500 1000 1500 2000 0.4 0.8 1.4 v d = 1250v i gm = 30a d ig /d t = 10a/ m s c s = 4.0 m f r s = 5 w t j = 125? d it /d t = 500a / m s 300a / m s 200a / m s 100a / m s 3.0 0.5 2.5 2.0 1.5 1.0 0 2500 0 500 1000 1500 2000 v d = 1250v v dm = 1875v d igq /d t = ?0a/ m s v rg = 17v c s = 4.0 m f l s = 0.3 m h t j = 125? turn off time t gq , turn off storage time t s ( m s) rate of rise of turn off gate current (a / m s) turn off time, turn off storage time vs. rate of rise of turn off gate current (typical) turn off time t gq , turn off storage time t s ( m s) turn off current (a) turn off time, turn off storage time vs. turn off current (typical) turn off gate current (a) rate of rise of turn off gate current (a / m s) turn off gate current vs. rate of rise of gate current (typical) turn off gate current (a) turn off current (a) turn off gate current vs. turn off current (typical) switching energy eon (j/p) turn on current (a) turn on switching energy (maximum) switching energy eoff (j/p) turn off current (a) turn off switching energy (maximum) mitsubishi gate turn-off thyristors FG2000FX-50DA high power inverter use press pack type
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